Silicon Nitride Ceramic Substrate
Product Description
Product Detail
The following is the introduction of high quality Silicon Nitride Ceramic Substrate, hoping to help you better understand it. Welcome new and old customers to continue to cooperate with us to create a better future! A silicon nitride ceramic substrate is a type of substrate made from silicon nitride, a high-performance ceramic material. These substrates are used in various electronic and engineering applications where properties like high thermal conductivity, mechanical strength, and electrical insulation are required.
Silicon nitride ceramic substrates are known for their excellent thermal stability and resistance to thermal shock, making them ideal for use in high-temperature environments. They are often used as insulating and supporting materials in electronic devices, power semiconductor modules, and other applications where efficient heat dissipation is crucial.
These substrates come in various shapes and sizes to suit different applications and can be customized to meet specific requirements. Their use can lead to increased product reliability, improved performance, and longer lifespans, making them valuable components in a range of industries.
The Torbo® Silicon Nitride Ceramic Substrate
Item:Silicon nitride substrate
Material:Si3N4
Color:Gray
Thickness:0.25-1mm
Surface processing:Double polished
Bulk density: 3.24g/㎤
Surface roughness Ra: 0.4μm
Bending strength: (3-point method):600-1000Mpa
Modulus of elasticity:310Gpa
Fracture toughness(IF method):6.5 MPa･√m
Thermal conductivity: 25°C 15-85 W/(m･K)
Dielectric loss factor:0.4
Volume resistivity: 25°C >1014 Ω･㎝
Breakdown strength:DC >15㎸/㎜
The Torbo® Silicon nitride ceramic substrate used in electronics fields such as power semiconductor modules, inverters and converters, replacing other insulating materials to increase production output and reduce size and weight.
Their extremely high strength also makes them a key material that increases the life and reliability of the products they are used in.
Double-sided heat dissipation in power cards (power semiconductors) , power control units for automobiles